Global Info Research‘s report is a detailed and comprehensive analysis for global SiC MOSFET Chips (Devices) and Module market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the SiC MOSFET Chips (Devices) and Module market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
According to our (Global Info Research) latest study, the global SiC MOSFET Chips (Devices) and Module market size was valued at US$ 1084 million in 2024 and is forecast to a readjusted size of USD 6147 million by 2031 with a CAGR of 26.0% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
SiC MOSFET chips, or silicon carbide metal-oxide-semiconductor field-effect transistor chips, are a new type of power semiconductor chip manufactured using silicon carbide (SiC) material. Compared to traditional silicon (Si) materials, SiC has a wide bandgap characteristic (bandgap width of approximately 3.26 eV, while silicon has 1.12 eV), which endows SiC MOSFET chips with a series of superior performance characteristics.
SiC MOSFET devices are complete semiconductor devices composed of SiC MOSFET chips as the core, along with necessary packaging materials, leads, etc. Packaging is critical for SiC MOSFET devices, as it not only provides physical protection for the chip, preventing mechanical damage and moisture corrosion, but also enables electrical connection between the chip and external circuits. Common packaging forms for SiC MOSFET devices include TO-247 and TO-220. Taking the TO-247 packaging as an example, it has excellent heat dissipation performance, enabling rapid dissipation of heat generated during chip operation, ensuring stable device operation in high-temperature environments.
SiC MOSFET modules integrate multiple SiC MOSFET devices and other auxiliary components such as diodes into a single power module through a specific circuit topology. This integrated design offers numerous advantages. On one hand, the optimized circuit connections between devices within the module enable higher power density. For example, in the main drive inverter of new energy vehicles, using SiC MOSFET modules can achieve higher power output within a limited space, contributing to the vehicle’s miniaturization and lightweight design. On the other hand, the internal layout and connections of the module are carefully designed to effectively reduce stray inductance, thereby enhancing system stability and reliability. Stray inductance can generate voltage spikes during switching processes, affecting the normal operation of devices. However, SiC MOSFET modules mitigate this impact through rational layout and routing.
The explosive growth of the new energy vehicle industry: The rapid development of the new energy vehicle market is the key driver behind the growth of the SiC MOSFET chip, device, and module markets. As countries worldwide increasingly prioritize energy conservation, emissions reduction, and environmental protection, new energy vehicles have become the mainstream direction for automotive industry development. In particular, the widespread adoption of 800V high-voltage platforms has imposed higher performance requirements on power devices. SiC MOSFETs, with their advantages of low on-resistance, high switching frequency, and high voltage withstand capability, have become the ideal choice for main drive inverters in 800V high-voltage platforms. Main drive inverters using SiC MOSFET modules can increase the range of new energy vehicles by 5%–10% while reducing charging time to 15–20 minutes, significantly enhancing the user experience. For example, Tesla was the first to adopt SiC MOSFET modules in its Model 3 and Model Y vehicles, and many other automakers have since followed suit, driving rapid growth in demand for SiC MOSFETs across the entire new energy vehicle industry.
Rapid development of the photovoltaic and energy storage industries: In the photovoltaic sector, global demand for renewable energy continues to rise, driving sustained growth in photovoltaic power generation capacity. The application of SiC MOSFETs in photovoltaic inverters can significantly improve inverter conversion efficiency and reduce energy loss. Traditional silicon-based IGBT inverters typically achieve conversion efficiencies of 96%–98%, while inverters using SiC MOSFETs can exceed 99% efficiency, meaning they can generate more electricity under the same lighting conditions. Additionally, the high-frequency characteristics of SiC MOSFETs enable the reduction in size and weight of passive components such as inductors and capacitors within inverters, thereby lowering system costs. In the energy storage sector, as the energy storage market continues to expand, the application of SiC MOSFETs in energy storage converters (PCS) is becoming increasingly widespread. They enhance the charging and discharging efficiency of energy storage systems, extend battery lifespan, and improve system stability and reliability. For example, in some large-scale energy storage power plant projects, energy storage converters using SiC MOSFET modules can achieve charging and discharging efficiencies of over 98%, significantly improving the economic benefits of energy storage systems.
Industrial energy conservation and power system upgrade requirements: In the industrial sector, there is an urgent need for energy conservation and consumption reduction in various industrial equipment such as motor drives and power converters. The application of SiC MOSFETs can significantly reduce the energy consumption of industrial equipment and improve production efficiency. For example, in industrial motor drive systems, replacing traditional silicon-based devices with SiC MOSFETs can increase system efficiency by 3%–5%, saving a significant amount of electricity annually. In the power system sector, as smart grid construction progresses, the performance and reliability requirements for power electronic devices continue to rise. SiC MOSFETs hold broad application prospects in fields such as high-voltage direct current transmission (HVDC) and flexible alternating current transmission systems (FACTS). They can enhance power system transmission efficiency, strengthen grid stability and controllability, and meet the evolving demands of power systems toward higher voltages, larger capacities, and greater intelligence.
This report is a detailed and comprehensive analysis for global SiC MOSFET Chips (Devices) and Module market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Market segment by Type: Sic MOSFET Chip and Device、 Sic MOSFET Module
Market segment by Application:Car、 Industrial、 Photovoltaic (pv)、 Other
Major players covered: Wolfspeed、 Infineon Technologies、 STMicroelectronics、 ROHM、 Semiconductor Components Industries, LLC、 Littelfuse、 Microchip、 Mitsubishi Electric、 GeneSiC Semiconductor Inc.、 Shenzhen BASiC Semiconductor LTD
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The overall report focuses on primary sections such as – market segments, market outlook, competitive landscape, and company profiles. The segments provide details in terms of various perspectives such as end-use industry, product or service type, and any other relevant segmentation as per the market’s current scenario which includes various aspects to perform further marketing activity. The market outlook section gives a detailed analysis of market evolution, growth drivers, restraints, opportunities, and challenges, Porter’s 5 Force’s Framework, macroeconomic analysis, value chain analysis and pricing analysis that directly shape the market at present and over the forecasted period. The drivers and restraints cover the internal factors of the market whereas opportunities and challenges are the external factors that are affecting the market. The market outlook section also gives an indication of the trends influencing new business development and investment opportunities.
The Primary Objectives in This Report determine the size of the total market opportunity of global and key countries,assess the growth potential for SiC MOSFET Chips (Devices) and Module and competitive factors affecting the marketplace,forecast future growth in each product and end-use market. Also,this report profiles key players in the global SiC MOSFET Chips (Devices) and Module market based on the following parameters – company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments.
SiC MOSFET Chips (Devices) and Module market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by region, regional analysis covers North America (United States, Canada, and Mexico),Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe),Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),South America (Brazil, Argentina, Colombia, and Rest of South America),Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).
The report provides insights regarding the lucrative opportunities in the SiC MOSFET Chips (Devices) and Module Market at the country level. The report also includes a precise cost, segments, trends, region, and commercial development of the major key players globally for the projected period.
The SiC MOSFET Chips (Devices) and Module Market report comprehensively examines market structure and competitive dynamics. Researching the SiC MOSFET Chips (Devices) and Module market entails a structured approach beginning with clearly defined objectives and a comprehensive literature review to understand the current landscape. Methodologies involve a mix of primary research through interviews, surveys, and secondary research from industry reports and databases. Sampling strategies ensure representation, while data analysis utilizes statistical and analytical techniques to identify trends, market sizing, and competitive landscapes. Key areas of focus include trend analysis, risk assessment, and forecasting. Findings are synthesized into a detailed report, validated through peer review or expert consultation, and disseminated to stakeholders, with ongoing monitoring to stay abreast of developments.
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